BAS86-M document number 83402 rev. 1.0, 13-jan-11 vishay semiconductors www.vishay.com 1 94 9371 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal schottky diode features ? for general purpose applications ? this diode features low turn-on voltage. the devices are protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges. ? metal-on-silicon schottky barrier device which is protected by a pn junction guard ring. ? the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing and coupling diodes for fast switching and low lo gic level applications ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? applications where a very low forward voltage is required mechanical data case: minimelf sod-80 weight: approx. 31 mg cathode band color: black packaging codes/options: 18/10k per 13" reel (8 mm tape), 10k/box 08/2.5k per 7" reel (8 mm tape), 12.5k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided that electrodes ar e kept at ambient temperature thermal characteristics t amb = 25 c, unless otherwise specified 1) valid provided that electrodes ar e kept at ambient temperature part ordering code type marking remarks BAS86-M BAS86-M-18 or BAS86-M-08 - tape and reel parameter test condition symbol value unit continuous reverse voltage v r 50 v forward continuous current i f 200 1) ma repetitive peak forward current t p < 1 s, 0.5 i frm 500 1) ma power dissipation 1) p tot 200 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r thja 300 1) k/w junction temperature t j 125 c ambient operating temperature range t amb - 65 to + 125 c storage temperature range t s - 65 to +150 c
www.vishay.com 2 document number 83402 rev. 1.0, 13-jan-11 BAS86-M vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min. ty p. max. unit reverse breakdown voltage i r = 10 a (pulsed) v (br) 50 v leakage current v r = 40 v i r 5a forward voltage pulse test t p < 300 s, i f = 0.1 ma, < 2 % v f 200 300 mv pulse test t p < 300 s, i f = 1 ma, < 2 % v f 275 380 mv pulse test t p < 300 s, i f = 10 ma, < 2 % v f 365 450 mv pulse test t p < 300 s, i f = 30 ma, < 2 % v f 460 600 mv pulse test t p < 300 s, i f = 100 ma, < 2 % v f 700 900 mv diode capacitance v r = 1 v, f = 1 mhz c d 8pf reverse recovery time i f = 10 ma, i r = 10 ma, i rr = 1 ma, t rr 5ns figure 1. max. reverse power dissipation vs. junction temperature figure 2. reverse current vs. junction temperature 15 8 27 0 50 100 150 200 250 300 350 400 450 500 25 50 75 100 125 150 t j - j u nction temperat u re (c) p - re v erse po w er dissipation (m w ) r - limit at 100 %v p r r - limit at 8 0 %v p r r r thja = 540 k/ w v r = 50 v 1 10 100 1000 10000 25 50 75 100 125 150 15 8 2 8 i - re v erse c u rrent ( a) r t j - j u nction temperat u re (c) v r = v rrm figure 3. forward current vs. forward voltage figure 4. diode capacitance vs. reverse voltage 15 8 29 0 0.5 1.0 1.5 0.1 1 10 100 1000 i- for w ard c u rrent (a) f v f - for w ard v oltage ( v ) t j = 25 c t j = 125 c 15 8 30 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100 f = 1 mhz v r - re v erse v oltage ( v ) c - diode capacitance (pf) d
BAS86-M document number 83402 rev. 1.0, 13-jan-11 vishay semiconductors www.vishay.com 3 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): minimelf sod-80 cathode indification 0.47 (0.019) max. 2.5 (0.09 8 ) max. 1.25 (0.49) min. 3.7 (0.146) 3.3 (0.130) 5 (0.197) ref. 2 (0.079) min. 1.6 (0.063) 1.4 (0.055) foot print recommendation: * * the gap b et w een pl u g and glass can b e either on cathode or anode side doc u ment no.:6.560-5005.01-4 re v . 8 - date: 07.j u ne.2006 96 12070
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